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6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade

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6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade

Name: 6inch 150mm SIC Wafer 4HN Type SiC Substrate Dummy Production And Zero Grade
Brand: ZMKJ
Price: 1 USD

Wholesale 6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade from china suppliers

Brand Name : ZMKJ

Model Number : 6inch 150mm SiC Substrate

Certification : ROHS

Place of Origin : CHINA

MOQ : 2pcs

Price : by case

Payment Terms : T/T, Western Union, MoneyGram

Supply Ability : 1-500pcs/month

Delivery Time : 1-6weeks

Packaging Details : single wafer package in 100-grade cleaning room

Material : SiC single crystal 4H-N 4H-Si

Grade : Production Dummy and Zero MPD

Thicnkss : 0.35mm and 0.5mm

LTV/TTV/Bow Warp : ≤5 um/≤15 u/$40 um/≤60 um

Application : For MOS and Semiconductor

Diameter : 6inch 150mm

Color : Green Tea

MPD : <2cm-2 for Zero MPD production grade

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Silicon Carbide (SiC) Substrates 4H and 6H Epi-Ready SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide(SiC) wafer N Type
6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN layer on sic

About Silicon Carbide (SiC)Crystal

Shanghai Famous Trade Co., Ltd 150 mm SiC wafers offer device manufacturers a consistent, high-quality substrate for developing high-performance power devices. Our SiC substrates are produced from crystal ingots of the highest quality using proprietary state-of-the-art physical vapor transport (PVT) growth techniques and computer-aided manufacturing (CAM). Advanced wafer manufacturing techniques are used to convert ingots into wafers to ensure the consistent, reliable quality you need.

Key features

Optimizes targeted performance and total cost of ownership for next-generation power electronics devices
Large diameter wafers for improved economies of scale in semiconductor manufacturing
Range of tolerance levels to meet specific device fabrication needs
High crystal quality
Low defect densities

Sized for improved production

With the 6inch 150 mm SiC wafer size, we offer manufacturers the ability to leverage improved economies of scale compared with 100 mm device fabrication. Our 6inch 150 mm SiC Wafers offer consistently excellent mechanical characteristics to ensure compatibility with existing and developing device fabrication processes.

6inch 200mm N-Type SiC Substrates Specifications
Property	P-MOS Grade	P-SBD Grade	D Grade
Crystal Specifications
Crystal Form	4H
Polytype Area	None Permitted		Area≤5%
(MPD) a	≤0.2 /cm2	≤0.5 /cm2	≤5 /cm2
Hex Plates	None Permitted		Area≤5%
Hexagonal Polycrystal	None Permitted
Inclusions a	Area≤0.05%	Area≤0.05%	N/A
Resistivity	0.015Ω•cm—0.025Ω•cm	0.015Ω•cm—0.025Ω•cm	0.014Ω•cm—0.028Ω•cm
(EPD)a	≤4000/cm2	≤8000/cm2	N/A
(TED)a	≤3000/cm2	≤6000/cm2	N/A
(BPD)a	≤1000/cm2	≤2000/cm2	N/A
(TSD)a	≤600/cm2	≤1000/cm2	N/A
(Stacking Fault)	≤0.5% Area	≤1% Area	N/A
Surface Metal Contamination	(Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2
Mechanical Specifications
Diameter	150.0 mm +0mm/-0.2mm
Surface Orientation	Off-Axis:4°toward <11-20>±0.5°
Primary Flat Length	47.5 mm ± 1.5 mm
Secondary Flat Length	No Secondary Flat
Primary Flat Orientation	<11-20>±1°
Secondary Flat Orientation	N/A
Orthogonal Misorientation	±5.0°
Surface Finish	C-Face:Optical Polish,Si-Face:CMP
Wafer Edge	Beveling
Surface Roughness (10μm×10μm)	Si Face Ra≤0.20 nm ； C Face Ra≤0.50 nm
Thickness a	350.0μm± 25.0 μm
LTV(10mm×10mm)a	≤2μm		≤3μm
(TTV)a	≤6μm		≤10μm
(BOW) a	≤15μm	≤25μm	≤40μm
(Warp) a	≤25μm	≤40μm	≤60μm
Surface Specifications
Chips/Indents	None Permitted ≥0.5mm Width and Depth		Qty.2 ≤1.0 mm Width and Depth
Scratches a (Si Face,CS8520)	≤5 and Cumulative Length≤0.5×Wafer Diameter		≤5 and Cumulative Length≤1.5× Wafer Diameter
TUA(2mm*2mm)	≥98%	≥95%	N/A
Cracks	None Permitted
Contamination	None Permitted
Edge Exclusion	3mm

6inch 150mm SIC Wafer 4H-N Type SiC Substrate Dummy Production And Zero Grade

CATALOGUE COMMON SIZE In OUR INVENTORY LIST

4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots	4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot	Customzied size for 2-6inch

>Packaging – Logistics

Concerns about each detail of the package, cleaning, anti-static, and shock treatment.
According to the quantity and shape of the product, we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassettes in the 100-grade cleaning room.

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