ZnTe Crystal Substrate Orientation110 10x10x0.5mm 10x10x1mm For THz Detection, THz Generation
ZnTe crystals are excellent terahertz crystals lt;110> Oriented ZnTe crystals in which THz pulses are detected by free space electro-optical detection.
Terahertz pulses and visible light pulses propagate in a common line through the ZnTe crystal. The terahertz pulse produces birefringence in the ZnTe crystal, which is read out by the linearly polarized visible light pulse. When the visible light pulse and the terahertz pulse are in the crystal at the same time, the visible light polarization will be rotated by the terahertz pulse. Using a l/4 waveplate and beam splitter polarizer and a set of balanced photodiodes, we "map" the THz pulse amplitude by monitoring the rotation of the visible pulse polarization of the ZnTe crystal with respect to the THz pulse after different delay times.
Zinc telluride crystal
ZnTe crystals are II-VI semiconductors with excellent electro-optical properties. they have a sphalerite (ZB) structure under natural conditions, a bandgap width of 2.3ev at room temperature, a large second-order nonlinear coefficient and electro-optical coefficient, and a higher efficiency in radiating and detecting THz electromagnetic waves than other electro-optical crystals, and thus ZnTe crystals are considered to be a better material for THz radiation sources and detectors.ZnTe ZnTe crystals are routinely used as terahertz radiation sources and detectors because the <110> direction of the crystal has the best phase match under laser pulses near 800 nm.
In addition, ZnTe crystals can be widely used in various optoelectronic devices, such as green light-emitting diodes, electro-optical detectors, solar cells and so on.
Product Features:
Applications in THz generation, detection and optical limiters
High crystal purity of 99.995%-99.999
Excellent surface quality
| Product name | ZnTe crystal substrate |
| Growth Technology | Bridgeman |
| Structure | Cube |
| Lattice constant(A) | 6.103 |
| Density(g/cm3) | 5.633 |
| Melt point(oC) | 1239 |
| Heat Capacity (J/g.k) | 0.16 |
| Coefficient of thermal expansion(10 -6/K) | 8.0 |
| Transparent wavelength(um) | 7-12(>66%) |
| Refractive index | 2.7 |
Q&A
Q:What are the properties of ZnTe?
A:ZnTe (zinc telluride) is a binary semiconductor with a cubic crystal structure. It has a wide bandgap of 2.26 eV at room temperature, making it useful for optoelectronic applications. ZnTe exhibits high thermal stability, good electron mobility, and is often used in infrared detectors, light-emitting diodes, and solar cells.
| Melting point | 1,295 °C; 2,363 °F; 1,568 K |
| Band gap | 2.26 eV |
| Electron mobility | 340 cm2/(V·s) |
| Thermal conductivity | 108 mW/(cm·K) |
*Can be customized according to customer requirements
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SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.
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ZnTe Crystal Substrate Orientation 110 10x10x0.5mm 10x10x1mm For THz Detection Generation Images
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